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Development of Multiscale Computational Model for Carrier Mobility in GaAs Nanopillars with Twin Boundaries

Article of Honda R&D Technical Review Vol.26 No.2

Summary

A multiscale computational model for the calculation of the effect of (111) twin boundaries on electron mobility in GaAs nanopillars synthesized using the Selective Area Metal Organic Vapor Phase Epitaxy (SA-MOVPE) method has been developed. The Non-equilibrium Green’s function method is applied in the calculation of quantum conductance in order to explicitly incorporate the effect of twin defect morphology. Quantum conductance is converted to a thermally-averaged scattering factor to connect quantum conductance to mobility. With this newly introduced factor, electron mobility can be corrected for a twin boundary scattering model. The calculated electron mobility for GaAs nanopillars synthesized under standard SA-MOVPE conditions with a mean twin spacing of 2.48 nm was 1000 cm2/V/s. In addition, the contribution of twin boundary scattering to the reduction of electron mobility was estimated to be 60% of the effect of the scattering factors overall.

Reference

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Author (organization or company)

Mitsumoto KAWAI(Fundamental Technology Research Center)

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